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Author Chen, K. N. ♦ Fan, A. ♦ Tan, C. S. ♦ Reif, R.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Wafer bonding ♦ copper ♦ bonding parameters ♦ three-dimensional (3-D) integration ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract A reliable copper wafer bonding process condition, which provides strong bonding at low bonding temperature with a short bonding duration and does not affect the device structure, is desirable for future three-dimensional (3-D) integration applications. In this review paper, the effects of different process parameters on the quality of blanket copper wafer bonding are reviewed and summarized. An overall view of copper wafer bonding for different bonding parameters, including pressure, temperature, duration, clean techniques, and anneal option, can be established. To achieve excellent copper wafer bonding results, 400°C bonding for 30 min. followed by 30 min. nitrogen anneal or 350°C bonding for 30 min. followed by 60 min. anneal bonding is necessary. In addition, by meeting the process requirements of future integrated circuit (IC) processes, the best bonding condition for 3-D integration can be determined.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 35
Issue Number 2
Page Count 5
Starting Page 230
Ending Page 234

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Source: SpringerLink