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Author Ballet, P. ♦ Polge, B. ♦ Biquard, X. ♦ Alliot, I.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword HgCdTe ♦ arsenic doping ♦ molecular beam epitaxy (MBE) ♦ extended x-ray absorption fine structure (EXAFS) ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Extended x-ray absorption fine structure (EXAFS) investigation was carried out on two arsenic-doped HgCdTe samples. Arsenic incorporation was achieved with a non-conventional radiofrequency plasma source in a molecular beam epitaxy reactor. Both samples were taken from the same epitaxial run. One of these samples followed a 400°C activation anneal under Hg pressure. EXAFS was used here to probe the local environment around arsenic, and the experimental data were fit through first-principle calculations to extract a quantitative description of the arsenic site transfer upon annealing. Arsenic neighbors are described in terms of chemical nature, numbers and distances. Arsenic was found to be involved mostly in non-crystalline structures, either an As$_{2}$Te$_{3}$ glass or an AsHg compact structure. The effect of annealing is to break down the chalcogenide glass, thus favoring the compact AsHg structure. EXAFS results were compared to 77 K Hall-effect measurements, and a very good correlation was found. These findings were compared to the commonly admitted scenario for arsenic site incorporation and transfer upon annealing and provided a new picture and the first experimental evidence of the site transfer.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-04-28
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 38
Issue Number 8
Page Count 7
Starting Page 1726
Ending Page 1732

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Source: SpringerLink