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Author Jiao, C. ♦ Ahyi, A. C. ♦ Dhar, S. ♦ Morisette, D. ♦ Myers Ward, R.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2017
Language English
Subject Keyword 4H-SiC ♦ 6H-SiC ♦ fast traps ♦ PSG ♦ NO annealing ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics
Abstract We report results on the interface trap density (D $_{it}$) of 4H- and 6H-SiC metal–oxide–semiconductor (MOS) capacitors with different interface chemistries. In addition to pure dry oxidation, we studied interfaces formed by annealing thermal oxides in NO or POCl$_{3}$. The D $_{it}$ profiles, determined by the C–ψ $_{s}$ method, show that, although the as-oxidized 4H-SiC/SiO$_{2}$ interface has a much higher D $_{it}$ profile than 6H-SiC/SiO$_{2}$, after postoxidation annealing (POA), both polytypes maintain comparable D $_{it}$ near the conduction band edge for the gate oxides incorporated with nitrogen or phosphorus. Unlike most conventional C–V- or G–ω-based methods, the C–ψ $_{s}$ method is not limited by the maximum probe frequency, therefore taking into account the “fast traps” detected in previous work on 4H-SiC. The results indicate that such fast traps exist near the band edge of 6H-SiC also. For both polytypes, we show that the total interface trap density (N $_{it}$) integrated from the C–ψ $_{s}$ method is several times that obtained from the high–low method. The results suggest that the detected fast traps have a detrimental effect on electron transport in metal–oxide–semiconductor field-effect transistor (MOSFET) channels.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2017-01-24
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 46
Issue Number 4
Page Count 5
Starting Page 2296
Ending Page 2300


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Source: SpringerLink