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Author Lin, You Da ♦ Wu, Yewchung Sermon
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Nickel-induced lateral crystallization (NILC) ♦ amorphous silicon ♦ polycrystalline silicon ♦ oxygen ♦ nickel oxide ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract Effects of oxygen in Ni films on the Ni-induced lateral crystallization (NILC) of amorphous silicon (a-Si) films at various temperatures have been investigated. It was found that oxygen in Ni films retarded the nucleation of polycrystalline silicon (poly-Si) from a-Si, but had little effect on the growth rate of poly-Si. This is because that needed an incubation period to be reduced to Ni metal for the subsequent mediated crystallization of a-Si.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 35
Issue Number 9
Page Count 4
Starting Page 1708
Ending Page 1711

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Source: SpringerLink