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Author Gusev, S. A. ♦ Zuev, S. Yu. ♦ Klimov, A. Yu. ♦ Pestov, A. E. ♦ Polkovnikov, V. N. ♦ Rogov, V. V. ♦ Salashchenko, N. N. ♦ Skorokhodov, E. V. ♦ Toropov, M. N. ♦ Chkhalo, N. I.
Source SpringerLink
Content type Text
Publisher SP MAIK Nauka/Interperiodica
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Surfaces and Interfaces, Thin Films
Abstract This work is devoted to the technology of mask manufacturing and investigation of the characteristics of the reflective mask employed in the extreme ultraviolet lithography test bench designed at the Institute for Physics of Microstructures, Russian Academy of Sciences. The mask’s structure and composition have been optimized. The antireflecting (absorbing) coating and stop-layer materials that are used to etch the mask structure and the multilayer interference system, which reflects radiation at the operating wavelength, have been selected. The mask manufacturing technology is described. The measured reflective and geometrical characteristics of a mask (absorbing layer thicknesses, line widths, and line-edge roughnesses) are presented. A new direct method for certifying mask defects of 30 nm or more is proposed.
ISSN 10274510
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-08-07
Publisher Place Dordrecht
e-ISSN 18197094
Journal Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number 6
Issue Number 4
Page Count 6
Starting Page 568
Ending Page 573


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Source: SpringerLink