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Author Yang, J.R. ♦ Cao, X.L. ♦ Wei, Y.F. ♦ He, L.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2008
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword HgCdTe ♦ etch pits ♦ defects ♦ dislocation ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract The characteristics of defects in HgCdTe liquid-phase epitaxy (LPE) epilayers were investigated by using Schaake’s and Chen’s etches. By tracking the etch pits (EP), two kinds of threading dislocations with <110> and <211> orientations were observed for the first time in HgCdTe LPE epilayers. They are ascribed to perfect 60 deg dislocation and Shockley partial screw dislocations. The kinds of dislocation etch pits revealed by Schaake’s and Chen’s etches were experimentally confirmed to be correlated one-to-one. In addition to the threading dislocation etch pits, another kind of etch pits without the threading feature was also observed using both etch methods. The density of the nonthreading etch pits increases in the regions close to epilayer-substrate interfaces, scratched areas, and melt droplets. The etch pit density (EPD) varies from 10$^{4}$ cm$^{−2}$ to 10$^{7}$ cm$^{−2}$ from sample to sample or at different places on the same sample, indicating that they are correlated to stresses and should be considered in the assessment of HgCdTe epilayers.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2008-05-01
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 37
Issue Number 9
Page Count 6
Starting Page 1241
Ending Page 1246

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Source: SpringerLink