Thumbnail
Access Restriction
Subscribed

Author Paskova, T. ♦ Darakchieva, V. ♦ Valcheva, E. ♦ Paskov, P. P. ♦ Ivav, I. G. ♦ Monemar, B. ♦ Böttcher, T. ♦ Roder, C. ♦ Hommel, D.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2004
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword GaN ♦ HVPE ♦ strain ♦ wafer bending ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract The strain distribution in thick hydride vapor-phase epitaxial (HVPE)-GaN layers grown on metal-organic vapor-phase epitaxial GaN templates was studied by means of photoluminescence, x-ray mapping, and lattice parameter analysis. A variable temperature x-ray study of the film curvature was used for verification of the strain type. The relation between the strain inhomogeneity and the wafer bending in films residing on sapphire and freestanding on the thickness of the layer and the substrate is analyzed. Possibilities to improve the uniformity of the film characteristics and to reduce the bending of the HVPE-GaN films are discussed.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2004-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 33
Issue Number 5
Page Count 6
Starting Page 389
Ending Page 394


Open content in new tab

   Open content in new tab
Source: SpringerLink