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Author Chen, Wei Liang ♦ Kuo, Dong Hau ♦ Tuan, Thi Tran Anh
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2016
Language English
Subject Keyword Cu$_{2}$ZnSnSe$_{4}$ ♦ InGaN ♦ thin film solar cells ♦ sputtering ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics
Abstract Cu$_{2}$ZnSnSe$_{4}$ (CZTSe) films for solar cell devices were fabricated by sputtering with a Cu–Zn–Sn metal target, followed by two-step post-selenization at 500–600°C for 1 h in the presence of single or double compensation discs to supply Se vapor. After that, two kinds of n-type III-nitride bilayers were prepared by radio frequency sputtering for CdS-free CZTSe thin film solar cell devices: In$_{0.15}$Ga$_{0.85}$N/GaN/CZTSe and In$_{0.15}$Ga$_{0.85}$N/In$_{0.3}$Ga$_{0.7}$N/CZTSe. The p-type CZTSe and the n-type In$_{ x }$Ga$_{1−x }$N films were characterized. The properties of CZTSe changed with the selenization temperature and the In$_{ x }$Ga$_{1−x }$N with its indium content. With the CdS-free modeling for a solar cell structure, the In$_{0.15}$Ga$_{0.85}$N/In$_{0.3}$Ga$_{0.7}$N/CZTSe solar cell device had an improved efficiency of 4.2%, as compared with 1.1% for the conventional design with the n-type conventional ZnO/CdS bilayer. Current density of ∼48 mA/cm$^{2}$, the maximum open-circuit voltage of 0.34 V, and fill factor of 27.1% are reported. The 3.8-fold increase in conversion efficiency for the CZTSe thin film solar cell devices by replacing n-type ZnO/CdS with the III-nitride bilayer proves that sputtered III-nitride films have their merits.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2016-12-20
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 46
Issue Number 3
Page Count 7
Starting Page 1481
Ending Page 1487

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Source: SpringerLink