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Author An, S. Y. ♦ Kim, J. S. ♦ Seo, D. W. ♦ Suh, S. H.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword HgCdTe ♦ passivation ♦ Cd/Hg ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract Cadmium telluride (CdTe) is being widely used for passivating the HgCdTe p-n diode junction. Instead of CdTe, we tried a compositionally graded HgCdTe as a passivation layer that was formed by annealing an HgCdTe p-n junction in a Cd/Hg atmosphere. During annealing, Cd diffuses into HgCdTe from the Cd vapor, while Hg diffuses out from HgCdTe, forming compositionally graded HgCdTe at the surface. The Cd mole fraction at the surface was constant regardless of the annealing temperature in the range of 250–350°C. Capacitance versus voltage (C-V) curves for p-type HgCdTe that were passivated with compositionally graded HgCdTe formed by Cd/Hg annealing at 260°C showed a smaller flat-band voltage than the one passivated by thermally deposited CdTe, indicative of the better quality of the passivation. A long-wave infrared (LWIR) HgCdTe p-n junction diode passivated by compositionally graded HgCdTe showed about a one order of magnitude smaller R$_{d}$A value than the one passivated by thermally deposited CdTe, confirming the effectiveness of the compositionally graded HgCdTe as a passivant.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 31
Issue Number 7
Page Count 5
Starting Page 683
Ending Page 687


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Source: SpringerLink