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Author Völklein, F. ♦ Schmitt, M. ♦ Cornelius, T. W. ♦ Picht, O. ♦ Müller, S. ♦ Neumann, R.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Microchip ♦ Seebeck coefficient ♦ bismuth ♦ nanowire ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Bismuth nanowires were electrochemically grown in ion track-etched polycarbonate membranes. Micromachining and microlithography were employed to realize a newly developed microchip for Seebeck coefficient measurements on individual nanowires. By anisotropic etching of a (100) Si wafer, an 800-nm-thick SiO$_{2}$/Si$_{3}$N$_{4}$ membrane was prepared in the chip center. The low thermal conductivity of the membrane is crucial to obtain the required temperature difference ΔT along the nanowire. The wire is electrically contacted to thin metal pads which are patterned by a new method of microscopic exposure of photoresist and a lift-off process. A ΔT between the two pairs of contact pads, located on the membrane, is established by a thin-film heater. Applying the known Seebeck coefficient of a reference film, the temperature difference at this gap is determined. Using ΔT and the measured Seebeck voltage U of the nanowire, its Seebeck coefficient can be calculated.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-02-28
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 38
Issue Number 7
Page Count 7
Starting Page 1109
Ending Page 1115


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Source: SpringerLink