### Oxygen-related deep levels in Al$_{0.5}$In$_{0.5}$P grown by MOVPEOxygen-related deep levels in Al$_{0.5}$In$_{0.5}$P grown by MOVPE

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 Author Cederberg, J. G. ♦ Bieg, B. ♦ Huang, J. W. ♦ Stockman, S. A. ♦ Peanasky, M. J. ♦ Kuech, T. F. Source SpringerLink Content type Text Publisher Springer-Verlag File Format PDF Copyright Year ©2000 Language English
 Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences Subject Keyword Oxygen ♦ defects ♦ metal-organic vapor phase epitaxy ♦ deep level transient spectroscopy ♦ deep levels ♦ AlInP ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy Abstract Oxygen related defects in Al-containing materials have been determined to degrade luminescence efficiency and reduce carrier lifetime and affect the performance of light emitting diodes and laser diodes utilizing these materials. We have used the;metal-organic source diethylaluminum ethoxide (DEAlO) to intentionally incorporate oxygen-related defects during growth of Al$_{0.5}$In$_{0.5}$P by metal-organic vapor phase epitaxy (MOVPE). The incorporated oxygen forms several energy levels in the bandgap with energies of 0.62 eV to 0.89 eV below the conduction band detected using deep level transient spectroscopy. Secondary ion mass spectroscopy measurements of the total oxygen concentration in the layers shows a direct correlation to the measured trap concentrations. Several other energy levels are detected that are not correlated with the oxygen content of the film. The possible origin of these additional levels is discussed. ISSN 03615235 Age Range 18 to 22 years ♦ above 22 year Educational Use Research Education Level UG and PG Learning Resource Type Article Publisher Date 2000-01-01 Publisher Place New York e-ISSN 1543186X Journal Journal of Electronic Materials Volume Number 29 Issue Number 4 Page Count 4 Starting Page 426 Ending Page 429