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Author Galin, M. A. ♦ Demidov, E. V. ♦ Reznik, A. N.
Source SpringerLink
Content type Text
Publisher Pleiades Publishing
File Format PDF
Copyright Year ©2014
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Surfaces and Interfaces, Thin Films
Abstract A method is proposed for determining the sheet resistance of a semiconductor film on a dielectric substrate with the help of a near-field (NF) microwave microscope. The method is based on the theory of NF probing of the object with an arbitrary 1D permittivity profile. The theoretical model parameters are found from calibration measurements performed with the use of a universal set of reference samples. The test structures are GaN films grown on an Al$_{2}$O$_{3}$ substrate. A comparison with dc measurements indicates that the method error is approximately 20%.
ISSN 10274510
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-06-06
Publisher Place Moscow
e-ISSN 18197094
Journal Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number 8
Issue Number 3
Page Count 7
Starting Page 477
Ending Page 483


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Source: SpringerLink