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Author Elizondo, S.L. ♦ Zhao, F. ♦ Kar, J. ♦ Ma, J. ♦ Smart, J. ♦ Li, D. ♦ Mukherjee, S. ♦ Shi, Z.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2008
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Mid-IR detector ♦ IV–VI ♦ dielectric screening ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Recent advancements in IV–VI growth techniques have led to a renewed interest in using Pb$_{1−x }$Sn$_{ x }$Se for mid infrared (mid-IR) detector fabrication. There is now a greater need for an in-depth theoretical understanding of the potential competitiveness of these material systems with Hg$_{1−x }$Cd$_{ x }$Te (MCT) especially in regards to material defects and device performance. Herein, we calculate the shielding effects of the dielectric constant by considering the scattering of electrons due to ionized impurities and small charged dislocations. The higher dielectric constant in IV–VI materials, nearly ten times greater than that of MCT, is shown to more effectively screen out the influence of impurities.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2008-03-21
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 37
Issue Number 9
Page Count 4
Starting Page 1411
Ending Page 1414

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Source: SpringerLink