### Dielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCTDielectric Charge Screening of Dislocations and Ionized Impurities in PbSe and MCT

Access Restriction
Subscribed

 Author Elizondo, S.L. ♦ Zhao, F. ♦ Kar, J. ♦ Ma, J. ♦ Smart, J. ♦ Li, D. ♦ Mukherjee, S. ♦ Shi, Z. Source SpringerLink Content type Text Publisher Springer US File Format PDF Copyright Year ©2008 Language English
 Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences Subject Keyword Mid-IR detector ♦ IV–VI ♦ dielectric screening ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials Abstract Recent advancements in IV–VI growth techniques have led to a renewed interest in using Pb$_{1−x }$Sn$_{ x }$Se for mid infrared (mid-IR) detector fabrication. There is now a greater need for an in-depth theoretical understanding of the potential competitiveness of these material systems with Hg$_{1−x }$Cd$_{ x }$Te (MCT) especially in regards to material defects and device performance. Herein, we calculate the shielding effects of the dielectric constant by considering the scattering of electrons due to ionized impurities and small charged dislocations. The higher dielectric constant in IV–VI materials, nearly ten times greater than that of MCT, is shown to more effectively screen out the influence of impurities. ISSN 03615235 Age Range 18 to 22 years ♦ above 22 year Educational Use Research Education Level UG and PG Learning Resource Type Article Publisher Date 2008-03-21 Publisher Place Boston e-ISSN 1543186X Journal Journal of Electronic Materials Volume Number 37 Issue Number 9 Page Count 4 Starting Page 1411 Ending Page 1414