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Author Pang, Liang ♦ Seo, Hui Chan ♦ Chapman, Patrick ♦ Adesida, Ilesanmi ♦ Kim, Kyekyoon Kevin
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2010
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Gallium nitride ♦ Ohmic contact ♦ breakdown voltage ♦ selective-area growth ♦ plasma-assisted molecular-beam epitaxy ♦ Solid State Physics ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Selective-area growth (SAG) based on plasma-assisted molecular-beam epitaxy (PAMBE) was shown to facilitate improvement of Ohmic contacts and direct-current (DC) characteristics for GaN-based field-effect transistors (FETs) over the widely accepted ion-implantation technique. Twofold improvements in breakdown voltage were also demonstrated for samples grown on both sapphire and silicon substrates. An AlGaN/GaN high-electron-mobility transistor (HEMT) fabricated with PAMBE-SAG exhibited a low specific contact resistivity of 5.86 × 10$^{−7}$ Ω cm$^{2}$, peak drain current of 420 mA/mm, and high breakdown voltage of 77 V. These results demonstrate that PAMBE-SAG is suited to fabricating HEMTs for high-power applications.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-03-09
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 39
Issue Number 5
Page Count 5
Starting Page 499
Ending Page 503


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Source: SpringerLink