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Author Yang, G. R. ♦ Shen, H. ♦ Li, C. ♦ Lu, T. M.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©1997
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Adhesion ♦ Cu ♦ plasma partially ionized beam (Plasma PIB) ♦ parylene-N (PA-N) ♦ ion mass spectrosmetry (SIMS) ♦ x-ray photoelectron spectroscopy (XPS) ♦ plasma immersion ion implantation (PIII) ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract Adhesion between copper and n-type parylene (PA-N) has been studied. The PA-N film was deposited on Si(100) substrate by vapor deposition polymerization (VDP), and the Cu film was deposited on PA-N by plasma partially ionized beam (Plasma PIB) as well as other deposition techniques as a comparison. The adhesion strength was measured by 90° peel test after the sample was cleaved into a strip to define geometry. A peel strength of greater than 70 g/mm between the Cu film and PA-N was achieved by Cu Plasma PIB. X-ray photoelectron spectroscopy (XPS) studies found no Cu-O-C bond formation at Cu-parylene surface, while secondary ion mass spectrometry (SIMS) studies showed that a significant amount of Cu was shallowly implanted into the PA-N, with an average concentration of 10$^{17}$–10$^{18}$ atoms/cm$^{3}$ near the interface. The results showed that a physically intermixing layer of about 100Å between the two phases formed by shallow implantation of Cu into PA-N was the main mechanism of adhesion. A suggested model is proposed correspondingly.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 26
Issue Number 2
Page Count 5
Starting Page 78
Ending Page 82

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Source: SpringerLink