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Author Lee, Ching Ting ♦ Yeh, Ming Yuan ♦ Tsai, Chang Da ♦ Lyu, Yen Tang
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©1997
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Al/Nd-GaN ohmic contacts ♦ Interdiffusion ♦ Specific contactresistance ♦ Surface properties morphology ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract A bilayer Nd/Al metallization structure has been deposited onto low pressure organometallic vapor phase epitaxy grown n-type GaN ( 1 × 10$^{18}$ cm$^{−3}$) by electron-beam evaporation. Ohmic metal contacts were patterned photolithographically for standard transmission line measurement, and then thermally annealed at temperatures ranging from 200 to 350°C and from 500 to 650°C using conventional thermal annealing (CTA) and rapid thermal annealing (RTA), respectively. The lowest values for the specify contact resistivity of 9.8 × 10$^{−6}$ Ω−cm$^{2}$ and 8 × 10$^{−6}$ Ω−cm$^{2}$ were obtained using Nd/Al metallization with CTA of 250°C for 5 min and RTA of 600°C for 30 s. Examination of the surface morphology using atomic force microscopy as a function of annealing temperature revealed that the surface roughness was strongly influenced by conventional thermal annealing, it was smooth in the temperature range from 550 to 650°C for rapid thermal annealing. Auger electron spectroscopy depth profiling was employed to investigate the metallurgy and interdiffusion of contact formation.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 26
Issue Number 3
Page Count 4
Starting Page 262
Ending Page 265

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Source: SpringerLink