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Author Oktyabrsky, S. ♦ Tokrav, V. ♦ Agnello, G. ♦ Eisden, J. ♦ Yakimov, M.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2006
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword InAs ♦ quantum dots (QDs) ♦ molecular beam epitaxy (MBE) ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract A number of nano-engineering methods are proposed and tested to improve optical properties of a laser gain medium using the self-assembled InAs quantum dot (QD) ensemble. The laser characteristics of concern include higher gain, larger modulation bandwidth, higher efficiency at elevated temperatures, higher thermal stability, and enhanced reliability. The focus of this paper is on the management of QD properties through design and molecular beam epitaxial growth and modification of QD heterostructures. This includes digital alloys as high-quality wide-bandgap barrier; under- and overlayers with various compositions to control the dynamics of QD formation and evolution on the surface; shape engineering of QDs to improve electron-hole overlap and reduce inhomogeneous broadening; band engineering of QD heterostructures to enhance the carrier localization by reduction of thermal escape from dots; as well as tunnel injection from quantum wells (QWs) to accelerate carrier transfer to the lasing state. Beneficial properties of the developed QD media are demonstrated at room temperature in laser diodes with unsurpassed thermal stability with a characteristic temperature of 380 K, high waveguide modal gain >50 cm$^{−1}$, unsurpassed defect tolerance over two orders of magnitude higher than that of QWs typically used in lasers, and efficient emission from a two-dimensional (2-D) photonic crystal nanocavity.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2006-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 35
Issue Number 5
Page Count 12
Starting Page 822
Ending Page 833


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Source: SpringerLink