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Author Vilela, M.F. ♦ Harris, S.F. ♦ Kvaas, R.E. ♦ Buell, A.A. ♦ Newton, M.D. ♦ Olsson, K.R. ♦ Lofgreen, D.D. ♦ Johnson, S.M.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2009
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword HgCdTe ♦ HgCdTe/Si ♦ molecular-beam epitaxy (MBE) ♦ n-type ♦ p-type ♦ doping ♦ Hall ♦ SIMS ♦ EPD ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract In this paper, we show the versatility of using molecular-beam epitaxy (MBE) for the growth of the mercury cadmium telluride (HgCdTe) system. Abrupt composition profiles, changes in doping levels or switching doping types are easily performed. It is shown that high-quality material is achieved with Hg$_{(1–x)}$Cd$_{ x }$Te grown by MBE from a cadmium mole fraction of x = 0.15 to x = 0.72. Doping elements incorporation as low as 10$^{15}$ cm$^{−3}$ for both n-type and p-type material as well as high incorporation levels >10$^{18}$ cm$^{−3}$ for both carrier types were achieved. X-ray curves, secondary-ion mass spectrometry (SIMS) data, Hall data, the influence of doping incorporation with cadmium content and growth rate, etch pit density (EPD), composition uniformity determined from Fourier-transform infrared (FTIR) transmission spectro- scopy, and surface defect maps from low to high x values are presented to illustrate the versatility and quality of HgCdTe material grown by MBE. All data presented in this work are from layers grown on silicon (112) substrate.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2009-04-21
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 38
Issue Number 8
Page Count 9
Starting Page 1755
Ending Page 1763

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Source: SpringerLink