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Author Zhang, L. H. ♦ Pearson, S. D. ♦ Tong, W. ♦ Wagner, B. K. ♦ Benson, J. D. ♦ Summers, C. J.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©1998
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword As-doping ♦ HgCdTe ♦ metalorganic molecular beam epitaxy (MOMBE) ♦ p-type ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract This paper presents a study of both as-grown and annealed p-type Hg$_{1−x}$Cd$_{x}$Te layers that were doped using a cadmium arsenide source. It is shown that by using a metalorganic molecular beam epitaxy system stable and reproducible p-type HgCdTe:As layers were obtained through direct homogeneous doping. The hole concentrations in the as-grown and annealed samples were 8 × 10$^{16}$ to 3 × 10$^{17}$ cm$^{−3}$ with mobilities of 120∼300 cm$^{2}$/V-s. The as-grown HgCdTe:As layers had very good crystalline quality with double crystal x-ray rocking curve line-widths ranging from 27 to 42 arc sec. Experimental data demonstrated a strong correlation of hole concentration and mobility with the surface morphology and crystalline quality as a function of Hg flux. The optimum growth window was defined by a narrow range of Hg flux values that gave a smooth film with fewer voids, and higher hole concentrations and mobilities than were obtained at lower or higher Hg fluxes. This correlation between the growth window defined by the surface morphology and the dopant behavior was very important for the successful growth of p-type As-doped HgCdTe materials.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1998-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 27
Issue Number 6
Page Count 5
Starting Page 600
Ending Page 604

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Source: SpringerLink