### P-type as-doping of Hg$_{1−x}$Cd$_{x}$Te grown by MOMBEP-type as-doping of Hg$_{1−x}$Cd$_{x}$Te grown by MOMBE

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 Author Zhang, L. H. ♦ Pearson, S. D. ♦ Tong, W. ♦ Wagner, B. K. ♦ Benson, J. D. ♦ Summers, C. J. Source SpringerLink Content type Text Publisher Springer-Verlag File Format PDF Copyright Year ©1998 Language English
 Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences Subject Keyword As-doping ♦ HgCdTe ♦ metalorganic molecular beam epitaxy (MOMBE) ♦ p-type ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy Abstract This paper presents a study of both as-grown and annealed p-type Hg$_{1−x}$Cd$_{x}$Te layers that were doped using a cadmium arsenide source. It is shown that by using a metalorganic molecular beam epitaxy system stable and reproducible p-type HgCdTe:As layers were obtained through direct homogeneous doping. The hole concentrations in the as-grown and annealed samples were 8 × 10$^{16}$ to 3 × 10$^{17}$ cm$^{−3}$ with mobilities of 120∼300 cm$^{2}$/V-s. The as-grown HgCdTe:As layers had very good crystalline quality with double crystal x-ray rocking curve line-widths ranging from 27 to 42 arc sec. Experimental data demonstrated a strong correlation of hole concentration and mobility with the surface morphology and crystalline quality as a function of Hg flux. The optimum growth window was defined by a narrow range of Hg flux values that gave a smooth film with fewer voids, and higher hole concentrations and mobilities than were obtained at lower or higher Hg fluxes. This correlation between the growth window defined by the surface morphology and the dopant behavior was very important for the successful growth of p-type As-doped HgCdTe materials. ISSN 03615235 Age Range 18 to 22 years ♦ above 22 year Educational Use Research Education Level UG and PG Learning Resource Type Article Publisher Date 1998-01-01 Publisher Place New York e-ISSN 1543186X Journal Journal of Electronic Materials Volume Number 27 Issue Number 6 Page Count 5 Starting Page 600 Ending Page 604