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Author Wang, J. ♦ Zhu, Z. ♦ Park, K. T. ♦ Hiraga, K. ♦ Yao, T.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©1997
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Chemical vapor deposition ♦ GaN ♦ High power radio frequency plasma ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract GaN films have been deposited on GaAs(lOO) substrates by a novel growth technique, hot plasma chemical vapor deposition. A radio frequency N plasma source with high power, up to 5 kW, provides an abundance of nitrogen atoms during growth. In addition, strong ultraviolet emissions from the hot plasma irradiate onto the substrate and promote the dissociation of triethylgallium, this results in growth of GaN at very low temperature (even at room temperature). In this paper, we describe the characteristics of hot nitrogen plasma and present the results of the low temperature growth of GaN. In addition, we have investigated the effects of the nitridation of GaAs substrates. Reflection high energy electron diffraction indicates the formation of a surface cubic nitrided layer on the pretreated GaAs. The GaN films grown on fully nitrided GaAs(l00) substrates are of dominantly cubic structures.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 1997-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 26
Issue Number 3
Page Count 5
Starting Page 232
Ending Page 236

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Source: SpringerLink