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Author Price, Steve ♦ Wang, Larry ♦ Wang, Alice ♦ Ginwalla, Arwa ♦ Mowat, Ian
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword SIMS ♦ TOF-SIMS ♦ HgCdTe ♦ impurities ♦ Na ♦ Cu ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract In this study, time-of-flight (TOF) secondary ion mass spectrometry (SIMS) was compared against dynamic SIMS to determine detection limits and background levels for nine impurities: Li, Na, K, Al, Ni, As, In, Fe, and Cu. Statistics were gathered by measuring six material test structure samples from six different liquid phase epitaxy (LPE) HgCdTe double layer heterojunction (DLHJ) wafers. Also included is a comparison between dynamic SIMS and TOF-SIMS capabilities.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-08-13
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 36
Issue Number 8
Page Count 4
Starting Page 1106
Ending Page 1109

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Source: SpringerLink