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Author Pan, M. ♦ Nause, J. ♦ Rengarajan, V. ♦ Rondon, R. ♦ Park, E.H. ♦ Ferguson, I.T.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword ZnO ♦ p-type doping ♦ metal organic chemical vapor deposition (MOCVD) ♦ epitaxial growth ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract N-doped p-type ZnO thin films were grown on c-sapphire substrates, semi-insulating GaN templates, and n-type ZnO substrates by metal organic chemical vapor deposition (MOCVD). Diethylzinc and oxygen were used as precursors for Zn and O, respectively, while ammonia (NH$_{3}$) and nitrous oxide (N$_{2}$O) were employed as the nitrogen dopant sources. X-ray diffraction (XRD) studies depicted highly oriented N-doped ZnO thin films. Photoluminescence (PL) measurements showed a main emission line around 380 nm, corresponding to an energy gap of 3.26 eV. Nitrogen concentration in the grown films was analyzed by secondary ion mass spectrometry (SIMS) and was found to be on the order of 10$^{18}$ cm$^{−3}$. Electrical properties of N-doped ZnO epilayers grown on semi-insulating GaN:Mg templates were measured by the Hall effect and the results indicated p-type with carrier concentration on the order of 10$^{17}$ cm$^{−3}$.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-01-31
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 36
Issue Number 4
Page Count 5
Starting Page 457
Ending Page 461

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Source: SpringerLink