Access Restriction

Author Suvorov, E. V. ♦ Smirva, I. A.
Source SpringerLink
Content type Text
Publisher Pleiades Publishing
File Format PDF
Copyright Year ©2013
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Surfaces and Interfaces, Thin Films
Abstract We propose methods for obtaining quantitative data on the parameters of defects that are observed on projection topographs and determining the main parameters (the displacement-field value and character, the depth of the occurrence of defects under the input surface of the crystal, their spatial orientation, and other parameters) of defects from the characteristics of a diffraction image that is recorded on projection topographs. The possibility of determining the main characteristics of defects through the analysis of diffraction images on projection topographs is shown using the example of rectilinear dislocations introduced into a silicon monocrystal upon plastic bending.
ISSN 10274510
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2014-02-07
Publisher Place Moscow
e-ISSN 18197094
Journal Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number 7
Issue Number 6
Page Count 3
Starting Page 1044
Ending Page 1046

Open content in new tab

   Open content in new tab
Source: SpringerLink