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Author Voss, L.F. ♦ Stafford, L. ♦ Khanna, R. ♦ Gila, B.P. ♦ Abernathy, C.R. ♦ Pearton, S.J. ♦ Ren, F. ♦ Kravchenko, I.I.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword GaN ♦ Ohmic contacts ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract The use of TaN, TiN, and ZrN diffusion barriers for Ti/Al-based contacts on n-GaN (n ∼ 3 × 10$^{17}$ cm$^{−3}$) is reported. The annealing temperature (600–1,000°C) dependence of the Ohmic contact characteristics using a Ti/Al/X/Ti/Au metallization scheme, where X is TaN, TiN, or ZrN, deposited by sputtering was investigated by contact resistance measurements and Auger electron spectroscopy (AES). The as-deposited contacts were rectifying and transitioned to Ohmic behavior for annealing at ≥600°C. A minimum specific contact resistivity of ∼6 × 10$^{−5}$ Ω-cm$^{−2}$ was obtained after annealing over a broad range of temperatures (600–900°C for 60 s), comparable to that achieved using a conventional Ti/Al/Pt/Au scheme on the same samples. The contact morphology became considerably rougher at the high end of the annealing range. The long-term reliability of the contacts at 350°C was examined; each contact structure showed an increase in contact resistance by a factor of three to four over 24 days at 350°C in air. AES profiling showed that the aging had little effect on the contact structure of the nitride stacks.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-09-21
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 36
Issue Number 12
Page Count 7
Starting Page 1662
Ending Page 1668


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Source: SpringerLink