### Arsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed PhotodiodesArsenic Diffusion Study in HgCdTe for Low p-Type Doping in Auger-Suppressed Photodiodes

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 Author Itsu, A. M. ♦ Emelie, P. Y. ♦ Phillips, J. D. ♦ Velicu, S. ♦ Grein, C. H. ♦ Wijewarnasuriya, P. S. Source SpringerLink Content type Text Publisher Springer US File Format PDF Copyright Year ©2010 Language English
 Subject Domain (in DDC) Technology ♦ Engineering & allied operations Subject Keyword Arsenic ♦ HgCdTe ♦ diffusion coefficient ♦ low doping concentration ♦ high operating temperature ♦ infrared detector ♦ Solid State Physics ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials Abstract Controllable p-type doping at low concentrations is desired for multilayer HgCdTe samples in a P $^{+}$/π/N $^{+}$ structure due to the promise of suppressing Auger processes, and ultimately reduced dark current for infrared detectors operating at a given temperature. In this study, a series of arsenic implantation and annealing experiments have been conducted to study diffusion at low Hg partial pressure with the goal of achieving effective control over dopant profiles at low concentration. Arsenic dopant profiles were measured by secondary ion mass spectroscopy (SIMS), where diffusion coefficients were extracted with values ranging between 3.35 × 10$^{−16}$ cm$^{2}$ s$^{−1}$ and 6 × 10$^{−14}$ cm$^{2}$ s$^{−1}$. Arsenic diffusion coefficients were found to vary strongly with Hg partial pressure and HgCdTe alloy composition, corresponding to variations in Hg vacancy concentration. ISSN 03615235 Age Range 18 to 22 years ♦ above 22 year Educational Use Research Education Level UG and PG Learning Resource Type Article Publisher Date 2010-03-26 Publisher Place Boston e-ISSN 1543186X Journal Journal of Electronic Materials Volume Number 39 Issue Number 7 Page Count 6 Starting Page 945 Ending Page 950