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Author Itsu, A. M. ♦ Emelie, P. Y. ♦ Phillips, J. D. ♦ Velicu, S. ♦ Grein, C. H. ♦ Wijewarnasuriya, P. S.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2010
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Arsenic ♦ HgCdTe ♦ diffusion coefficient ♦ low doping concentration ♦ high operating temperature ♦ infrared detector ♦ Solid State Physics ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Controllable p-type doping at low concentrations is desired for multilayer HgCdTe samples in a P $^{+}$/π/N $^{+}$ structure due to the promise of suppressing Auger processes, and ultimately reduced dark current for infrared detectors operating at a given temperature. In this study, a series of arsenic implantation and annealing experiments have been conducted to study diffusion at low Hg partial pressure with the goal of achieving effective control over dopant profiles at low concentration. Arsenic dopant profiles were measured by secondary ion mass spectroscopy (SIMS), where diffusion coefficients were extracted with values ranging between 3.35 × 10$^{−16}$ cm$^{2}$ s$^{−1}$ and 6 × 10$^{−14}$ cm$^{2}$ s$^{−1}$. Arsenic diffusion coefficients were found to vary strongly with Hg partial pressure and HgCdTe alloy composition, corresponding to variations in Hg vacancy concentration.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2010-03-26
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 39
Issue Number 7
Page Count 6
Starting Page 945
Ending Page 950

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Source: SpringerLink