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Author Evwaraye, A.O. ♦ Smith, S.R. ♦ Mitchel, W.C. ♦ Capa, M.A.
Source SpringerLink
Content type Text
Publisher Springer US
File Format PDF
Copyright Year ©2007
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Intrinsic defects ♦ ion implantation ♦ electron emission ♦ illumination ♦ Solid State Physics and Spectroscopy ♦ Electronics and Microelectronics, Instrumentation ♦ Characterization and Evaluation of Materials ♦ Optical and Electronic Materials
Abstract Argon ions were implanted into n-type 6H-SiC epitaxial layers at 600°C. Postimplantation annealing was carried out at 1,600°C for 5 min in an Ar ambient. Four implantation-induced defect levels were observed at E$_{C}$-0.28 eV, E$_{C}$-0.34 eV, E$_{C}$-0.46 eV, and E$_{C}$-0.62 eV by deep level transient spectroscopy. The defect center at E$_{C}$-0.28 eV is correlated with ED$_{1}$/ED$_{2}$ and with ID$_{5}$. The defect at E$_{C}$-0.46 eV with a capture cross section of 7.8 × 10$^{−16}$ cm$^{2}$ is correlated with E1/E2, while the defect at E$_{C}$-0.62 eV with a capture cross section of 2.6 × 10$^{−14}$ cm$^{2 }$is correlated with Z1/Z2. Photo deep level transient spectroscopy was also used to study these defects. Upon illumination, the amplitudes of the deep level transient spectroscopy (DLTS) peaks increased considerably. Two emission components of Z1/Z2 were revealed: one fast and the other slow. The fast component could only be observed with a narrow rate window. In addition, a new defect was observed on the low-temperature side of the defect at E$_{C}$-0.28 eV when the sample was illuminated.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2007-02-14
Publisher Place Boston
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 36
Issue Number 4
Page Count 6
Starting Page 340
Ending Page 345

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Source: SpringerLink