Thumbnail
Access Restriction
Subscribed

Author Craciun, V. ♦ Singh, R. K. ♦ Boyd, Ian W.
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2002
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword VUV-assisted oxidation ♦ SiGe ♦ photon effects ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract The behavior of Ge atoms during dry oxidation of Si$_{0.8}$Ge$_{0.2}$ films at 300°C under 10 mbar of oxygen induced by vacuum-ultraviolet (VUV) illumination from an array of Xe$_{2}$* excimer lamps (λ=172 nm) has been studied. During VUV oxidation, samples are exposed to both a high concentration of ozone and atomic oxygen and a large flux of energetic photons. X-ray photoelectron spectroscopy (XPS) and Fourier-transform infrared (FTIR) spectroscopy investigations showed that the layers grown for shorter periods of time contain mostly SiO$_{2}$ with a few percent GeO$_{2}$. Most of the Ge atoms, initially present uniformly within the SiGe layer, were segregated and accumulated at the interface between the grown oxide and remaining SiGe. Angle-resolved XPS showed that the amount of GeO$_{2}$ within the grown oxide layer decreased for longer irradiation times and was located adjacent to the SiGe layer. When the grown SiO$_{2}$ layer reached a thickness around ∼70 Å and the amount of Ge that had accumulated in the segregated layer more than doubled, a sharp increase in the Ge oxidation rate was observed. Continuing the oxidation for longer irradiation times resulted in the formation of a mixed oxide layer. The Ge segregation was not previously observed during other low-temperature oxidation treatments, including ozone-assisted oxidation, which provides the same oxidation species as VUV-assisted oxidation and similar growth rates. It is, therefore, concluded that a VUV photon-irradiation enhancement effect on Si and Ge interdiffusion has been introduced, possibly involving either Si-Si or Si-Ge bond softening or even breaking.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2002-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 31
Issue Number 12
Page Count 5
Starting Page 1325
Ending Page 1329


Open content in new tab

   Open content in new tab
Source: SpringerLink