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Author Gorshkov, A. P. ♦ Karpovich, I. A. ♦ Volkova, N. S.
Source SpringerLink
Content type Text
Publisher SP MAIK Nauka/Interperiodica
File Format PDF
Copyright Year ©2012
Language English
Subject Domain (in DDC) Technology ♦ Engineering & allied operations
Subject Keyword Surfaces and Interfaces, Thin Films
Abstract The effect of electric field, temperature, and defect formation on the processes of nonequilibrium charge-carrier emission from InAs/GaAs quantum dots grown by vapor phase epitaxy is studied by photo-electric spectroscopy. It is shown that, under a relatively low electric field strength, the main mechanism for carrier emission is thermally activated emission; in strong fields, it is tunnel emission. Formation of defects under anodic oxidation of the surface leads to suppression of charge carrier emission from quantum dots due to the appearance of an effective recombination channel.
ISSN 10274510
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2012-06-06
Publisher Place Dordrecht
e-ISSN 18197094
Journal Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques
Volume Number 6
Issue Number 3
Page Count 3
Starting Page 515
Ending Page 517

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Source: SpringerLink