### Formation and characterization of self-organized CdSe quantum dotsFormation and characterization of self-organized CdSe quantum dots

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 Author Maehashi, Kenzo ♦ Yasui, buhiro ♦ Murase, Yasuhiro ♦ Ota, Takeshi ♦ ma, Tsuguki ♦ Nakashima, Hisao Source SpringerLink Content type Text Publisher Springer-Verlag File Format PDF Copyright Year ©2000 Language English
 Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences Subject Keyword Self-organized CdSe quantum dots ♦ photoluminescence ♦ transmission electron microscopy ♦ molecular beam epitaxy ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy Abstract We have investigated the formation and characteristic of self-organized CdSe quantum dots (QDs) on ZnSe(001) surfaces with the use of photoluminescence (PL) and transmission electron microscopy (TEM). Coherent CdSe QDs are naturally formed on ZnSe surfaces, when the thickness of CdSe layers is around 2 ML. The plan-view TEM images exhibit that CdSe QDs have a relatively narrow distribution of QD size, and that the density of CdSe QDs is about 10$^{10}$ cm$^{−2}$. The base structure of the CdSe dot is rhombic, which has the long axis of about 20 nm in length along $[1\bar 10]$ direction. The temperature dependence of macro-PL spectra reveals that the behavior of self-organized CdSe QDs is quite different from that of ZnCdSe quantum well (QW), resulting from characteristic features of zero-dimensional structures of QDs. Moreover, the macro-PL results suggest the existence of QW-like continuous state lying over QD states. Micro-PL measurements show several numbers of high-resolved sharp lines from individual CdSe QDs. The linewidth broadening with temperature depends on peak energy position of the QDs. The linewidths of lower energy lines, corresponding to larger size QDs, are more temperature dependent. ISSN 03615235 Age Range 18 to 22 years ♦ above 22 year Educational Use Research Education Level UG and PG Learning Resource Type Article Publisher Date 2000-01-01 Publisher Place New York e-ISSN 1543186X Journal Journal of Electronic Materials Volume Number 29 Issue Number 5 Page Count 8 Starting Page 542 Ending Page 549