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Author Hull, Brett A. ♦ Das, Mrinal K. ♦ Sumakeris, Joseph J. ♦ Richmond, James T. ♦ Krishnaswami, Sumi
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2005
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword PiN diode ♦ high voltage ♦ V$_{F}$ drift ♦ basal plane dislocation (BPD) ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract As impressive as the advancement in 4H-SiC material quality has been, 4H-SiC PiN diodes continue to suffer from irreversible, forward-voltage instabilities. In this work, we describe PiN diodes designed to block 10 kV and conduct 20 A at less than 4.5 V, which were fabricated on 4H-SiC PiN epitaxial layers that were grown with an innovative epitaxial process that has been developed specifically to suppress V$_{F}$ drift. The diodes fabricated on epitaxial layers that implemented this new epitaxy process showed excellent V$_{F}$ stability, with 86% of the diodes drifting less than 0.1 V during forward current stressing at 10 A (50 A/cm$^{2}$) for 30 min. However, these improvements in V$_{F}$ drift come with a cost in blocking yield, as the surface morphology and other crystal defects imparted by the epitaxial process resulted in only 1 of 50 diodes reaching the 10-kV blocking specification. Nevertheless, the remarkable progress in V$_{F}$ drift yield brings us closer to commercialization of high-power 4H-SiC PiN diodes.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2005-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 34
Issue Number 4
Page Count 4
Starting Page 341
Ending Page 344


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Source: SpringerLink