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Author Eliseev, Petr G. ♦ Osinski, Marek ♦ Lee, Jinhyun ♦ Sugahara, Tomoya ♦ Sakai, Shiro
Source SpringerLink
Content type Text
Publisher Springer-Verlag
File Format PDF
Copyright Year ©2000
Language English
Subject Domain (in DDC) Natural sciences & mathematics ♦ Chemistry & allied sciences
Subject Keyword Wide-bandgap semiconductors ♦ InGaN ♦ photoluminescence ♦ band tails ♦ homoepitaxy ♦ Optical and Electronic Materials ♦ Characterization and Evaluation of Materials ♦ Electronics and Microelectronics, Instrumentation ♦ Solid State Physics and Spectroscopy
Abstract A band-tail model of inhomogeneously broadened radiative recombination is presented and applied to interpret experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD. The temperature dependence of the spectral peak position is analyzed according to the model, explaining the anomalous temperature-induced blue spectral shift. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimation method. No apparent evidence of band tails in homoepitaxial structures indicates their higher crystalline quality.
ISSN 03615235
Age Range 18 to 22 years ♦ above 22 year
Educational Use Research
Education Level UG and PG
Learning Resource Type Article
Publisher Date 2000-01-01
Publisher Place New York
e-ISSN 1543186X
Journal Journal of Electronic Materials
Volume Number 29
Issue Number 3
Page Count 10
Starting Page 332
Ending Page 341


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Source: SpringerLink