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Author Jiang, R. ♦ Chen, J. ♦ Duan, G. X. ♦ Zhang, E. X. ♦ Schrimpf, R. D. ♦ Shen, X. ♦ Fleetwood, D. M. ♦ Kaun, S. W. ♦ Kyle, E. C. H. ♦ Speck, J. S. ♦ Pantelides, S. T.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ AMMONIA ♦ ANNEALING ♦ DEHYDROGENATION ♦ DENSITY FUNCTIONAL METHOD ♦ ELECTRON MOBILITY ♦ GALLIUM NITRIDES ♦ STRESSES ♦ TEMPERATURE RANGE 0273-0400 K ♦ TRANSISTORS
Abstract Hot-carrier degradation and room-temperature annealing effects are investigated in unpassivated ammonia-rich AlGaN/GaN high electron mobility transistors. Devices exhibit a fast recovery when annealed after hot carrier stress with all pins grounded. The recovered peak transconductance can exceed the original value, an effect that is not observed in control passivated samples. Density functional theory calculations suggest that dehydrogenation of pre-existing O{sub N}-H defects in AlGaN plays a significant role in the observed hot carrier degradation, and the resulting bare O{sub N} can naturally account for the “super-recovery” in the peak transconductance.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-07-11
Publisher Place United States
Journal Applied Physics Letters
Volume Number 109
Issue Number 2


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