|Author||Chun, B. S. ♦ Choi, Daniel S. ♦ Wu, H. C. ♦ Shvets, I. V. ♦ Abid, M. ♦ Chu, I. C. ♦ Serrano-Guisan, S.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||MATERIALS SCIENCE ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ ALUMINIUM ♦ APPROXIMATIONS ♦ BINDING ENERGY ♦ CONCENTRATION RATIO ♦ COUPLING ♦ CRYSTAL GROWTH ♦ DENSITY FUNCTIONAL METHOD ♦ DEPOSITION ♦ DOPED MATERIALS ♦ ELECTRIC CONDUCTIVITY ♦ ELECTRONIC STRUCTURE ♦ RADIOWAVE RADIATION ♦ SEMICONDUCTOR MATERIALS ♦ SPUTTERING ♦ THIN FILMS ♦ ZINC OXIDES ♦ CALCULATION METHODS ♦ CHALCOGENIDES ♦ DIMENSIONLESS NUMBERS ♦ ELECTRICAL PROPERTIES ♦ ELECTROMAGNETIC RADIATION ♦ ELEMENTS ♦ ENERGY ♦ FILMS ♦ MATERIALS ♦ METALS ♦ OXIDES ♦ OXYGEN COMPOUNDS ♦ PHYSICAL PROPERTIES ♦ RADIATIONS ♦ VARIATIONAL METHODS ♦ ZINC COMPOUNDS|
|Abstract||We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.|
|Learning Resource Type||Article|
|Publisher Place||United States|
|Journal||Applied Physics Letters|
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