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Author Rumyantsev, S. L. ♦ Pala, N. ♦ Shur, M. S. ♦ Gaska, R. ♦ Levinshtein, M. E. ♦ Khan, M. Asif ♦ Simin, G. ♦ Hu, X. ♦ Yang, J.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ FIELD EFFECT TRANSISTORS ♦ ORIGIN ♦ OXIDES ♦ PHYSICS ♦ TEMPERATURE DEPENDENCE
Abstract The low frequency noise in GaN field effect transistors has been studied as function of drain and gate biases. The noise dependence on the gate bias points out to the bulk origin of the low frequency noise. The Hooge parameter is found to be around 2{times}10{sup {minus}3} to 3{times}10{sup {minus}3}. Temperature dependence of the noise reveals a weak contribution of generation{endash}recombination noise at elevated temperatures. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-07-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 90
Issue Number 1


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