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Author Chel'nyi, A. A. ♦ Aluev, A. V. ♦ Maslov, S. V.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ CLADDING ♦ CURRENT DENSITY ♦ DOPED MATERIALS ♦ EFFICIENCY ♦ EMISSION ♦ GAIN ♦ GALLIUM ARSENIDES ♦ LAYERS ♦ N-TYPE CONDUCTORS ♦ OPTIMIZATION ♦ PHOSPHIDES ♦ P-TYPE CONDUCTORS ♦ RECOMBINATION ♦ WAVELENGTHS ♦ WIDTH ♦ AMPLIFICATION ♦ ARSENIC COMPOUNDS ♦ ARSENIDES ♦ DEPOSITION ♦ DIMENSIONS ♦ GALLIUM COMPOUNDS ♦ MATERIALS ♦ PHOSPHORUS COMPOUNDS ♦ PNICTIDES ♦ SEMICONDUCTOR MATERIALS ♦ SURFACE COATING
Abstract The influence of cladding doping level on the characteristics of laser diodes, which are based on an AlGaInP/GaInP/GaAs system and emit at wavelengths of 670-680 nm, is studied. It is shown experimentally that, as the ratio of the cladding doping levels P/N increases, the inversion current density J{sub 0} and the differential gain {beta} also increase. A monotonic increase in the characteristic temperature T{sub 0} accompanies this process. The internal quantum yield {eta}{sub 0} of stimulated recombination has a maximum at P/N=2.1. Laser diodes with a mesastripe width of 100 {mu}m are manufactured. The cw radiation power emitted by them is as high as 1000 mW at an efficiency of 1.55 W A{sup -1}. (active media. lasers)
ISSN 10637818
Educational Use Research
Learning Resource Type Article
Publisher Date 2004-01-31
Publisher Place United States
Journal Quantum Electronics
Volume Number 34
Issue Number 1


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