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Author Zhou, Xin ♦ Qiao, Ming ♦ He, Yitao ♦ Li, Zhaoji ♦ Zhang, Bo
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CARRIERS ♦ CURRENTS ♦ ELECTRIC POTENTIAL ♦ ELECTRON BEAM INJECTION ♦ HOLES ♦ INSTABILITY ♦ INTERFACES ♦ LAYERS ♦ METALS ♦ MODULATION ♦ SEMICONDUCTOR MATERIALS ♦ SILICON ♦ SILICON OXIDES ♦ SWITCHING CIRCUITS ♦ THIN FILMS ♦ TRAPPING ♦ TRAPS
Abstract Hot-carrier-induced linear drain current (I{sub dlin}) and threshold voltage (V{sub th}) degradations for the thin layer SOI field p-channel lateral double-diffused MOS (pLDMOS) are investigated. Two competition degradation mechanisms are revealed and the hot-carrier conductance modulation model is proposed. In the channel, hot-hole injection induced positive oxide trapped charge and interface trap gives rise to the V{sub th} increasing and the channel conductance (G{sub ch}) decreasing, then reduces I{sub dlin}. In the p-drift region, hot-electron injection induced negative oxide trapped charge enhances the conductance of drift doping resistance (G{sub d}), and then increases I{sub dlin}. Consequently, the eventual I{sub dlin} degradation is controlled by the competition of the two mechanisms due to conductance modulation in the both regions. Based on the model, it is explained that the measured I{sub dlin} anomalously increases while the V{sub th} is increasing with power law. The thin layer field pLDMOS exhibits more severe V{sub th} instability compared with thick SOI layer structure; as a result, it should be seriously evaluated in actual application in switching circuit.
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-11-16
Publisher Place United States
Journal Applied Physics Letters
Volume Number 107
Issue Number 20


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