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Author Luu, Son D. N. ♦ Vaqueiro, Paz
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY ♦ BISMUTH OXIDES ♦ BISMUTH TELLURIDES ♦ ELECTRIC CONDUCTIVITY ♦ LATTICE PARAMETERS ♦ MIXTURES ♦ N-TYPE CONDUCTORS ♦ POWDERS ♦ SOLIDS ♦ SYNTHESIS ♦ TEMPERATURE DEPENDENCE ♦ TETRAGONAL LATTICES ♦ THERMAL CONDUCTIVITY ♦ THERMOELECTRIC MATERIALS ♦ THERMOELECTRIC PROPERTIES ♦ X-RAY DIFFRACTION
Abstract Bi{sub 2}O{sub 2}Te was synthesised from a stoichiometric mixture of Bi, Bi{sub 2}O{sub 3} and Te by a solid state reaction. Analysis of powder X-ray diffraction data indicates that this material crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type (space group I4/mmm), with lattice parameters a=3.98025(4) and c=12.70391(16) Å. The electrical and thermal transport properties of Bi{sub 2}O{sub 2}Te were investigated as a function of temperature over the temperature range 300≤T (K)≤665. These measurements indicate that Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. The thermal conductivity of Bi{sub 2}O{sub 2}Te is remarkably low for a crystalline material, with a value of only 0.91 W m{sup −1} K{sup −1} at room temperature. - Graphical abstract: Bi{sub 2}O{sub 2}Te, which crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type, is an n-type semiconductor with a remarkably low thermal conductivity. - Highlights: • Bi{sub 2}O{sub 2}Te crystallises in the anti-ThCr{sub 2}Si{sub 2} structure type. • Bi{sub 2}O{sub 2}Te is an n-type semiconductor, with a band gap of 0.23 eV. • The thermal conductivity of Bi{sub 2}O{sub 2}Te approaches values found for amorphous solids. • The thermoelectric figure of merit of undoped Bi{sub 2}O{sub 2}Te reaches 0.13 at 573 K.
ISSN 00224596
Educational Use Research
Learning Resource Type Article
Publisher Date 2015-03-15
Publisher Place United States
Journal Journal of Solid State Chemistry
Volume Number 226


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