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Author Rao, D. ♦ Sin, K. ♦ Gibbons, M. ♦ Funada, S. ♦ Mao, M. ♦ Chien, C. ♦ Tong, H. -C.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ALUMINIUM ♦ BREAKDOWN ♦ MAGNETORESISTANCE ♦ PHYSICS ♦ PRECURSOR ♦ TUNNELING
Abstract The effect of a dc stress voltage on the junction resistance and magnetoresistance (MR) of spin-dependent tunneling (SDT) junctions with naturally oxidized barriers was investigated. There is a threshold voltage at which irreversible resistance change begins. Beyond this threshold, device resistance decreases gradually over a transition period prior to breakdown of the tunneling barrier. The onset voltage of irreversible resistance change is much higher than the optimum operating voltage of SDT heads having the precursor aluminum thicknesses here investigated (5{endash}11 Aa). The MR ratio decreased with increasing stress voltage in a pattern similar to that of the junction resistance. {copyright} 2001 American Institute of Physics.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-06-01
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 89
Issue Number 11


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