|Author||Jariwala, Pinank ♦ Thakor, P. B. ♦ Singh, Deobrat ♦ Sonvane, Y. A. ♦ Gupta, Sanjeev K.|
|Source||United States Department of Energy Office of Scientific and Technical Information|
|Subject Keyword||NANOSCIENCE AND NANOTECHNOLOGY ♦ ATOMS ♦ BINDING ENERGY ♦ BONDING ♦ COMPUTERIZED SIMULATION ♦ CROSS SECTIONS ♦ CRYSTAL STRUCTURE ♦ DIAMONDS ♦ NANOSTRUCTURES ♦ NANOWIRES ♦ SEMICONDUCTOR MATERIALS ♦ SILICON|
|Abstract||We have investigated the stable structural and electronic properties of Silicon (Si) nanowires having different cross-sections with 5-7 Si atoms per unit cell. These properties of the studied Si nanowires were significantly changed from those of diamond bulk Si structure. The binding energy increases as increasing atoms number per unit cell in different SiNWs structures. All the nanowires structures are behave like metallic rather than semiconductor in bulk systems. In general, the number of conduction channels increases when the nanowire becomes thicker. The density of charge revealed delocalized metallic bonding for all studied Si nanowires.|
|Learning Resource Type||Article|
|Publisher Place||United States|
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