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Author Rockett, A.
Sponsorship USDOE
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SOLAR ENERGY ♦ COPPER COMPOUNDS ♦ INDIUM COMPOUNDS ♦ GALLIUM COMPOUNDS ♦ SELENIUM COMPOUNDS ♦ SEMICONDUCTOR DEVICES ♦ THIN FILMS ♦ COPPER SELENIDES ♦ INDIUM SELENIDES ♦ GALLIUM SELENIDES ♦ POINT DEFECTS ♦ ELECTRONIC STRUCTURE ♦ ION IMPLANTATION ♦ IMPURITIES ♦ SODIUM ♦ CARRIER DENSITY ♦ ENERGY-LEVEL DENSITY
Abstract An overview is presented of results obtained recently by my group on the effect of point defects on the conduction properties of Cu(In{sub 1{minus}x}Ga{sub x})Se{sub 2}. (CIGS) An interpretation of the data is presented suggesting that clustering of majority point defects into superclusters. This leads to uncompensated defects around the perimeter of the superclusters. These may account for one type of acceptor in the material. The other acceptor is proposed to be Cu{sub In}, a minority defect. It is suggested based on electrical results that Ga increases formation of defects. The observed compensating donor is proposed to be unpaired In{sub Cu}. It is shown that these donors are removed by Na impurities. Finally, a discussion of ion implant damage is presented. It is argued that the mobility of holes in CIGS should be at least 100 cm{sup 2}/V-s in good materials. {copyright} {ital 1999 American Institute of Physics.}
ISSN 0094243X
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-03-01
Publisher Place United States
Volume Number 462
Issue Number 1
Technical Publication No. CONF-980935-


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