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Author Kuskovsky, Igor L. ♦ Neumark, G. F. ♦ Tischler, J. G. ♦ Weinstein, B. A.
Sponsorship (US)
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Publisher The American Physical Society
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ ACTIVATION ENERGY ♦ DEFECTS ♦ FLUCTUATIONS ♦ HYDROSTATICS ♦ INTERSTITIALS ♦ PHOTOLUMINESCENCE ♦ QUENCHING
Abstract We report the presence, in heavily doped and compensated ZnSe:N, of a resonant donor defect having an activation energy of {approx_equal}120--160 meV. The donor-acceptor pair photoluminescence observed in these materials is quenched at pressures higher than 25 kbar. We attribute this quenching to the shift of a resonant defect level into the band gap. A split N-N interstitial on a Se site is proposed as a strong candidate for the observed defect. We further propose that this species is the dominant donor defect at high p-doping levels and, consequently, is responsible for the potential fluctuations observed in this material. Moreover, a very important point shown by the present ZnSe:N data is that different compensating species will dominate in different ranges of N concentrations.
ISSN 01631829
Educational Use Research
Learning Resource Type Article
Publisher Date 2001-04-15
Publisher Place United States
Journal Physical Review B
Volume Number 63
Issue Number 16


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