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Author Pousset, J. ♦ Farella, I. ♦ Cola, A. ♦ Gambino, S.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS ♦ CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY ♦ A CENTERS ♦ CADMIUM TELLURIDES ♦ CARRIERS ♦ CHROMIUM ♦ ELECTRONS ♦ ENERGY GAP ♦ FERMI LEVEL ♦ HOLES ♦ PHOTOCURRENTS ♦ PULSES ♦ RADIANT FLUX DENSITY ♦ RECOMBINATION ♦ SPECTROSCOPY ♦ TIME-OF-FLIGHT METHOD ♦ TRANSIENTS ♦ VALENCE ♦ WAVELENGTHS
Abstract We report on a study of deep levels in semi-insulating CdTe:Cl by means of a time-of-flight spectral approach. By varying the wavelength of a pulsed optical source within the CdTe energy gap, transitions to/from localized levels generate free carriers which are analysed through the induced photocurrent transients. Both acceptor-like centers, related to the A-center, and a midgap level, 0.725 eV from the valence band, have been detected. The midgap level is close to the Fermi level and is possibly a recombination center responsible for the compensation mechanism. When the irradiance is varied, either linear or quadratic dependence of the electron and hole collected charge are observed, depending on the dominant optical transitions. The analysis discloses the potentiality of such a novel approach exploitable in the field of photorefractive materials as well as for deep levels spectroscopy.
ISSN 00218979
Educational Use Research
Learning Resource Type Article
Publisher Date 2016-03-14
Publisher Place United States
Journal Journal of Applied Physics
Volume Number 119
Issue Number 10


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