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Author Ishimaru, M. ♦ Dickerson, R. M. ♦ Sickafus, K. E.
Source United States Department of Energy Office of Scientific and Technical Information
Content type Text
Language English
Subject Keyword MATERIALS SCIENCE ♦ SILICON COMPOUNDS ♦ OXYGEN ♦ X-RAY FLUORESCENCE ANALYSIS ♦ SILICON CARBIDES ♦ ION IMPLANTATION ♦ OXYGEN IONS ♦ MICROSTRUCTURE ♦ TRANSMISSION ELECTRON MICROSCOPY ♦ KEV RANGE 100-1000 ♦ X-RAY SPECTROMETERS
Abstract Microstructures of oxygen ion implanted SiC have been examined using transmission electron microscopy (TEM) and scanning transmission electron microscopy equipped with an energy-dispersive x-ray spectrometer. 6H-SiC (0001) substrates were implanted with 180 keV oxygen ions at 650&hthinsp;{degree}C to fluences of 0.7{times}10{sup 18} and 1.4{times}10{sup 18}/cm{sup 2}. A continuous buried oxide layer was formed in both samples, while the surrounding 6H-SiC contained minimal damage. These results suggest that oxygen implantation into SiC is a useful technique to establish SiC-on-insulator structures. In bright-field TEM images, the amorphous layer possessed uniform contrast in the low-dose sample, while it consisted of three distinct layers in the high-dose sample: (1) a bubbled or mottled layer; (2) a dark contrast layer; and (3) a light contrast layer. Chemical measurements revealed that the bubbled and light contrast regions have low silicon and oxygen contents, while carbon enrichment was found in these layers. {copyright} {ital 1999 American Institute of Physics.}
ISSN 00036951
Educational Use Research
Learning Resource Type Article
Publisher Date 1999-07-01
Publisher Place United States
Journal Applied Physics Letters
Volume Number 75
Issue Number 3


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