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Author Vassanelli, S. ♦ Fromherz, P.
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Rat Brain ♦ Excitable Neuron ♦ Transistor Record ♦ Action Potential ♦ Cell Membrane ♦ Field Effect Transistor ♦ Ionic Current ♦ Voltagegated Sodium ♦ Voltage Transient ♦ Potassium Channel ♦ Oxidized Silicon ♦ Extracellular Voltage Beneath ♦ Excitable Nerve Cell ♦ Segmental Ganglion ♦ Individual Neuron ♦ Electrical Junction ♦ Signal Averaging ♦ Seal Resistance ♦ Metal-free Gate ♦ Extracellular Record ♦ Large Neuron ♦ Attached Region
Abstract . Field effect transistors form electrical junctions with excitable nerve cells from rat brain which are cultured on oxidized silicon. Action potentials in the neurons give rise to voltage transients on the gate with an amplitude < 100 V as revealed by signal averaging. The shape of the extracellular records depends on a depletion and accumulation of voltagegated sodium and potassium channels in the attached region of the cell membrane. PACS: 87.22.-q; 73.40.Mr; 8780.+s A field effect transistor (FET) with a metal-free gate in an electrolyte detects the extracellular voltage beneath an individual neuron [1]. The voltage transient during an action potential is caused by the current through the attached cell membrane which flows along the seal resistance between the neuron and the chip. By using large neurons from segmental ganglia of the leech, it was possible to distinguish junctions dominated by capacitive [1--4], ohmic [2--4], and voltagegated ionic currents [5]. In the future, tra...
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Publisher Date 1998-01-01