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Author Chu, Chun San ♦ Zhou, Yugang ♦ Chen, Kevin J. ♦ Lau, Kei May
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Novel Double-channel Varactors ♦ Physical Equivalent Circuit ♦ Useful High Q-factor Capacitance ♦ Measurement Result ♦ High Q-factor ♦ Superior Performance ♦ Hemt Compatible Process ♦ Single Channel Heterostructure ♦ Wide Tuning Range ♦ High Minimun Q-factor ♦ Extracted Q-factors ♦ Bias Voltage ♦ Double-channel Heterostructure
Abstract varactor fabricated with HEMT compatible process is presented. Our varactors achieved high Q-factor, wide tuning range and high minimun Q-factor (QmiR). The double-channel heterostructure extends the useful high Q-factor capacitance tuning range of the varactors. The operation of the varactor is explained by a physical equivalent circuit, in which the whole changing trend of extracted Q-factors over bias voltage and extracted resistance can be explained. The measurement results of the novel double-channel varactors are compared with the varactors facbricated on single channel heterostructure in order to show its superior performances.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study