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Author Crespo, A. ♦ Fitch, R. ♦ Gillespie, J. ♦ Moser, N. ♦ Via, G. ♦ Yannuzzi, M.
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Algan Gan Hemts ♦ Different Metal Stack ♦ Different Vendor ♦ Metal Stack ♦ Single Wafer ♦ Ohmic Contact ♦ N-algan High Electron Mobility Transistor
Abstract Optimization of the ohmic contacts in an n-AlGaN high electron mobility transistors (HEMT) structure is presented. The method used was similar to that reported in [1]. In this case four different metal stacks were present in a single wafer. The metal stacks were optimized for different vendors. The results from the optimization are presented.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study