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Author Benvenutic, Giacomo ♦ Parsonsd, Catherine ♦ Wagnerc, Estelle ♦ Dabiriana, Ali ♦ Silviu Cosmin, S. ♦ Rushworthd, Simon ♦ Hoffmanna, Patrik ♦ Kuzminykha, Yury
Source CiteSeerX
Content type Text
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Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Abstract Combinatorial lithium niobate deposition on 150 mm naturally oxidized silicon (100) wafers in a high-vacuum chemical vapor deposition reactor using Li(OBut) and Nb(OEt)4(dmae) is presented. The novel precursor supply system allows individual spatial control of precursors impinging rates on the substrate. This results in variations of the film properties in a single experiment at a certain substrate temperature due to the influence of different precursors flow rates and ratios. It efficiently leads to deposition conditions to achieve highly <001> oriented polycrystalline lithium niobate films.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study