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Author Powell, J. Anthony ♦ Larkin, David J. ♦ Trunek, Andrew J.
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Structural Defect ♦ Silicon Carbide Single Crystal ♦ High Temperature Etch Process ♦ 6h-sic Substrate ♦ Single Crystal Sic Substrate ♦ Localized Transformation ♦ High Temperature ♦ Local Si-c Bilayer ♦ Surface Feature ♦ Continuous Coverage ♦ 4h-sic Substrate ♦ H2 C3h8 Gaseous Etches ♦ Transformation Abstract ♦ Etching Process ♦ Elongated Hillock
Abstract transformation Abstract: Single crystal SiC substrates were subjected to high temperature (1575 °C) H2/C3H8 gaseous etches. The etches resulted in a variety of surface features on 4H-SiC substrates that included elongated hillocks from 10 to> 100 m in length by a few m in width. In some 4H- and 6H-SiC substrates, the etches resulted in a continuous coverage of macrosteps. We conclude that the morphology observed after the etching process is influenced by the local Si-C bilayer stacking sequence on the surface of off-(0001) oriented substrates. A model is presented for the formation of the hillocks, based on localized transformations of the 4H substrates during the high temperature etch process. 1.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Learning Resource Type Article