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Author Kiziloglu, K. ♦ Chow, D. ♦ Arthur, A.
Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Heterojunction Bipolar Transistor ♦ Step Polyimide Etchback ♦ Resonant Tunneling Diode ♦ Stop Layer ♦ Hbt Process ♦ Minor Modification ♦ Layer Growth ♦ Situ Sensor
Abstract A process is reported on for integration of resonant tunneling diodes (RTDs) and heterojunction bipolar transistors (HBTs.) Single stacked layer growth, etch stop layers, in situ sensors, and simulation have been used to improve and ensure the manufacturability of the process. Only minor modifications to the existing HBT process were required to incorporate the RTDs.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study