Access Restriction

Source CiteSeerX
Content type Text
File Format PDF
Subject Domain (in DDC) Computer science, information & general works ♦ Data processing & computer science
Subject Keyword Ambient Pressure ♦ Silicon Nanowire Growth ♦ Thermal Evaporation ♦ Growth Mechanism ♦ Elsevier Science B.v. Right ♦ Smooth Surface ♦ Si Nano-particles ♦ Closed System ♦ Microscopic Examination ♦ Previous Open System ♦ Silicon Nanowires
Abstract Growth of silicon nanowires (SiNWs) by thermal evaporation of SiO in a closed system was studied. The yield of SiNWs obtained in the present closed system was much higher than that from the previous open systems. As the ambient pressure increased, the yield of SiNWs decreased and the diameter of the SiNWs increased, but the surface of the SiNWs was roughened. Transmission electron microscopic examination showed that the originally smooth surface of SiNWs was roughened by the formation of Si nano-particles. The implication of these results on the growth mechanism of the SiNWs is discussed. Ó 2001 Elsevier Science B.V. All rights reserved. 1.
Educational Role Student ♦ Teacher
Age Range above 22 year
Educational Use Research
Education Level UG and PG ♦ Career/Technical Study
Publisher Date 2000-01-01